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Details&Spec

Details

DSi Silicon Photodetector

Both are enclosed in a housing with BNC signal connector, and include mounting flanges for the direct mounting on the slit assembly of Omni-λ series monochromators. I-V amplifier ZAMP is recommended for the signal conversion

Silicon photodetector application advices:

· DSi200/DSi300 are both current output modes, before connecting to the signal processors such as oscilloscope or lock-in amplifier, the IV Trans-impedance Amplifier ZAMP is proposed to be connected as a preamp and which can convert the current signal to voltage signal.
· If the signal processor indicates that it can be input current signal, you can connect the detectors to the signal processors directly. In order to improve the detection sensitivity, the IV Trans-impedance Amplifier is recommended.
· DSi200/DSi300 used with the DCS103 data acquisition system, the IV Trans-impedance Amplifier is recommended in order to improve the detection sensitivity.
· DSi200/DSi300 used with the DCS300PA data acquisition system, as signal amplifier has been integrated in the DCS300PA dual channel, it does not need to match pre-amplifier.

Silicon photodiode detectors are a rugged standard detector for applications that have good collected light levels.
· DSi200 is UV enhanced for operation from 200-1100 nm, built-in UV sensitive Si photodetector
· DSi300 is general purpose detector for 300-1100 nm

Mode	DSi200	DSi 300
Mode	UV enhanced	Blue enhanced
Effective Area(mm2)	100 ( ø11.28)	100 ( ø11.28)
Spectral Range(nm)	200-1100	350-1100
Peak Wavelength(nm)	820	970
Peak Responsivity(A/W)	0.52	0.60(>0.55)
Response(A/W)	0.14(>0.09)@254 nm	0.20(>0.15)@410 nm
Rise Time(s)	5.9	2
Operating Temperature(°C)	-10~+60	-10~+60
Storage Temperature(°C)	-20~+70	-20~+70
Shunt Resistor(MΩ)	10 (>5)	(>10)
Noise Equivalent Power NEP(W / √Hz)	4.5×10-13	2.0×10-13
Max.Operating Current(mA@0V Bias)	0.1	10.0
Junction Capacitance (pf@0V Bias)	4500	8800
Signal Output	current	current
Output Signal Polarity	P	P

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DSi Silicon Photodetector

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