Product Instruction:
Micro-nano Photoelectric imaging measurement system uses microscopic imaging technique, multi excitation light paths, to provide stable, little size monochromatic light to a photovoltaic test device. Its functions are characterizing the short-circuit current distributions, surface defect, and reflectivity in electronic devices.
Based on the galvo scanning technique, the system features fast scanning and high spatial resolution, widely used to research solar cells and photoelectric devices, such as Dye sensitized, monocrystal silicon, multicrystal silicon, organic semiconductor, GaN detector, and so on. The photoelectric imaging can provide important analytic data for the QE, the resistance distribution, and the inhomogeneity of photo-generated current.
System Structure:
The system contains excitation lasers, scanning galvanometer, microscopy, data acquisition unit, and control software. When scanning the sample, the galvanometer make the laser spot scans and moves in the XY direction of the sample fast. The software records the position of each scanning point and current output value, and synchronously depicts a graph showing the current distribution of the sample. The light path also ensure the light spot pattern on different positions of the sample will not change.
Components:
■ Light Sources
■ Microscopy
■ Scanning Galvanometer
■ Source Meter
■ Probe Station and Software
Configuration:
The spot modes at different positions of the setting area are same
Features
■ Multi-laser wavelength is optional
■ Easy sample replacement
■ XY linear stage is easy to change the measuring point of the sample
■ Galvo scanning removes the vibration effects
■ The visualization software can arbitrarily choose the scanning area
Applications:
Nanomaterials, 2D materials, Wafer Analysis, Detector Photoelectric Characteristic Test, Area Array Detector Pixel Measurement, Microdomain Characteristics of Device Charge Generation;
Specifications:
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Light Source
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Standard 532nm Laser, energy stability is 1% @ 4 h 2 lasers is optional;
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Microscope Module
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Reflective / Transmissive LED Lighting Objective Lens: Standard (20x, WD= 7.5 mm)
Maximum Scanning range: 260 × 200 μm under 20x Objective Lens
Spatial accuracy: less 1μm Minimum Step: 0.2μm
Step Optional Range: 0.2 - 30μm
Laser Spot: 2μm
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Data Acquisition Unit
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Source meter: Keithley 2450 Current Range: 1 nA - 1 A Noise: 50 pA
Resolution: 20 fA
Accuracy: 0.03%
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Probe Station
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65mm diameter vacuum suction plate
The probe holder and the sample on one plate is moved together, moving the sample will not affect electrode contact.
Travel Range: 25 mm, Resolution: 5μm
Probe holder: XYZ travel range 12 mm, resolution 0.7μm Probe: Tungsten, diameter 5μm, 10μm, 20μm are optional
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Software
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Photocurrent scanning: Set a fixed voltage, record the current of different point.
I-V curve scanning: Set a voltage range to acquire I-V curve of different point The scanning area can be selected.
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Spectral Responsivity Test (Optional)
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Spectral range: 200-1100 nm, scalable to 2500 nm Spectral responsivity measurement
Quantum efficiency measurement Bias voltage test function
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Laser (Optional)
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Wavelength: 405 nm or 635 nm is optional, other wavelength consulting sales Output stability: less 1 % @ 2 h
Power: 10 mW or 30 mW (Optional)
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Software Function：
■ Move the position of the light spot
■ Select the testing area
■ Turn on/off the monitoring
■ Set the parameter of the IV curve
■ Real-time display of test data and test point locations
■ Display test progress and test time
■ Data processing: thresholding, Zoom in or out, ascend line display, 3D data display, export data in txt or excel
Test sample diagram
Software interface：
Instruction of Software：
The data analysis software shown as below:
The analysis software feature powerful data processing functions, as shown in the picture below.
Functions: adjust the value range, zoom in the selected area, return to all area, contour line display, display signal distribution on a straight line, 3D display, export data, etc.
Examples：
1. Silicon detector: active area 120×120 μm
Test conditions:
■ Laser wavelength: 532nm;
■ Power: 1 mW
■ Objective Lens: 20 x.
Figure A, CCD monitoring graph of the sample scanning area; Figure B, contour map and 3D map of sample mapping data.
2. Nanomaterial-WSe2: active area 25×10 μm
Figure A, the imaging map of the sample monitoring area, Figure B, the CCD monitoring map of the sample scanning area, Figure C, the sample scanning data contour map and 3D map.
Test conditions:
■ Laser wavelength: 532nm;
■ Power: 5 mW
■ Objective lens: 20 x.
Selection Table:
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Model
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DSR500-LBIC
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DSR500-LBIC-RDB
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Laser
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Wavelength 532nm, power: 30mW, stability: 1% @ 2 h
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Objective lens
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20 x @ Olympus, WD-7.5 mm, wavelength range: 350-750 nm
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Probe station
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2 pcs probe holders
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Data acquisition unit
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Keithley 2450
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Null
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13910278534
010-56370168
